40nm CMOS温度补偿电源复位电路

2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2019-06-12 DOI:10.1109/EDSSC.2019.8754457

Yanfei Lin, Ken Xu

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引用次数: 5

摘要

为了提高POR (power-on-reset)电路的精度和消除常规POR (power-on-reset)电路的带隙参考电路，本文提出了一种低成本、低功耗、具有精确触发电压的温度补偿POR电路。提出的POR电路采用40nm CMOS技术设计和实现。它在1.1V电源下实现了740nA的静态电流，0.008mm2的有源面积，以及350ppm/°C的触发电压温度系数，范围从-40°C到120°C。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Temperature-Compensated Power-on-Reset Circuit in 40nm CMOS

To improve the accuracy and eliminate the bandgap reference circuit of conventional POR (power-on-reset) circuits, a low-cost, low-power, temperature-compensated POR circuit with precise trigger voltage is presented in this paper. The proposed POR circuit was designed and implemented in a 40nm CMOS technology. It achieves a 740nA quiescent current under 1.1V power supply, a 0.008mm2 active area, and a 350ppm/°C trigger voltage temperature coefficient from -40°C to 120°C.

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来源期刊

2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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