直接键合SiO/sub /-InP在光控MOSFET中的高电流调制

International Topical Meeting on Microwave Photonics. MWP '96 Technical Digest. Satellite Workshop (Cat. No.96TH8153) Pub Date : 1996-12-03 DOI:10.1109/MWP.1996.662108

T. Yamagata, T. Sakai, K. Sakata, K. Shimomura

{"title":"直接键合SiO/sub /-InP在光控MOSFET中的高电流调制","authors":"T. Yamagata, T. Sakai, K. Sakata, K. Shimomura","doi":"10.1109/MWP.1996.662108","DOIUrl":null,"url":null,"abstract":"High current modulation in an optically controlled MOSFET has been obtained. The structure of the device was composed of the absorption region of pin photo diode and the MOSFET region bonded by using SiO/sub 2/-InP direct wafer bonding technique. When the laser light with a wavelength of 1.50 /spl mu/m was irradiated to the absorption region, more than 550 /spl mu/A of drain-to-source current modulation and a maximum responsivity of more than 280 A/W was obtained.","PeriodicalId":433743,"journal":{"name":"International Topical Meeting on Microwave Photonics. MWP '96 Technical Digest. Satellite Workshop (Cat. No.96TH8153)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High current modulation in optically controlled MOSFET using directly-bonded SiO/sub 2/-InP\",\"authors\":\"T. Yamagata, T. Sakai, K. Sakata, K. Shimomura\",\"doi\":\"10.1109/MWP.1996.662108\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High current modulation in an optically controlled MOSFET has been obtained. The structure of the device was composed of the absorption region of pin photo diode and the MOSFET region bonded by using SiO/sub 2/-InP direct wafer bonding technique. When the laser light with a wavelength of 1.50 /spl mu/m was irradiated to the absorption region, more than 550 /spl mu/A of drain-to-source current modulation and a maximum responsivity of more than 280 A/W was obtained.\",\"PeriodicalId\":433743,\"journal\":{\"name\":\"International Topical Meeting on Microwave Photonics. MWP '96 Technical Digest. Satellite Workshop (Cat. No.96TH8153)\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-12-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Topical Meeting on Microwave Photonics. MWP '96 Technical Digest. Satellite Workshop (Cat. No.96TH8153)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWP.1996.662108\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Topical Meeting on Microwave Photonics. MWP '96 Technical Digest. Satellite Workshop (Cat. No.96TH8153)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWP.1996.662108","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在光控MOSFET中实现了高电流调制。该器件的结构由引脚光电二极管的吸收区和采用SiO/sub /-InP直接晶圆键合技术键合的MOSFET区组成。当波长为1.50 /spl mu/m的激光照射到吸收区时，得到了大于550 /spl mu/ a的漏源电流调制和大于280 a /W的最大响应度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

High current modulation in optically controlled MOSFET using directly-bonded SiO/sub 2/-InP

High current modulation in an optically controlled MOSFET has been obtained. The structure of the device was composed of the absorption region of pin photo diode and the MOSFET region bonded by using SiO/sub 2/-InP direct wafer bonding technique. When the laser light with a wavelength of 1.50 /spl mu/m was irradiated to the absorption region, more than 550 /spl mu/A of drain-to-source current modulation and a maximum responsivity of more than 280 A/W was obtained.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

International Topical Meeting on Microwave Photonics. MWP '96 Technical Digest. Satellite Workshop (Cat. No.96TH8153)

自引率

0.00%

发文量