带有动态上拉电阻栅极驱动器的10MHz GaN降压变换器

S. Li, Pin Ying Wang, Ching-Jan Chen, Chih-Chao Hsu
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引用次数: 6

摘要

针对高开关频率氮化镓(GaN) dc-dc降压变换器,设计了一种最大输入电压为12V、用于氮化镓同步降压变换器的10MHz开关频率栅极驱动IC。所提出的自举电路防止了GaN应用中的过充电问题,动态上拉电阻栅极驱动器有效抑制了400mV的栅源电压尖峰,上升时间为2.3ns。提出了一种适用于高速应用的低传播延迟和高共模瞬态抗扰度移电平器,仿真结果表明,该移电平器的开启传播延迟为480.9ps,关闭传播延迟为633.4ps。该器件采用0.25 μm TSMC双极- cmos - dmos工艺制备。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 10MHz GaN Based Buck Converter with Dynamic Pull-up Resistor Gate Driver
Targeting on high switching frequency gallium nitride (GaN) dc-dc buck converter, this paper presents a 10MHz switching frequency gate driver IC for GaN based synchronous buck converter with 12V maximum input voltage. The proposed bootstrap circuit prevent overcharge issue in GaN application, and the dynamic pull-up resistor gate driver suppress the gate-to-source voltage spike 400mV effectively and the rising time is 2.3ns. A low propagation delay and high common-mode transient immunity level shifter is also proposed for high speed application achieves the turn on propagtion delay is 480.9ps and the turn off propagation delay is 633.4ps by simulation result. This work was fabricated in a 0.25-μm TSMC Bipolar-CMOS-DMOS process.
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