Zn1-xCoxO, ZnCo2O4和mn掺杂GaAs薄膜的局域和全局磁性能

INTERMAG 2006 - IEEE International Magnetics Conference Pub Date : 2006-05-08 DOI:10.1109/INTMAG.2006.375641

W. Iwamoto, P. Pagliuso, R. Urbano, C. Rettori, K. Samanta, P. Bhattacharya, R. Katiyar, J. D. da Silva, A. Pereira, G.A. Medeiros, S. Oseroff

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引用次数: 1

摘要

报道了不同类型铁磁薄膜的磁化率和电子自旋共振(ESR)。研究了不同Mn浓度(0.5 ~ 10%)和相同Mn浓度下的GaAs和GaN的非晶态和结晶薄膜。采用脉冲激光沉积方法在c轴(0001)取向Al2O3衬底上沉积薄膜。

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Local and Global Magnetic properties of Zn1-xCoxO, ZnCo2O4 and Mn-doped GaAs thin films

Magnetic susceptibility and electron spin resonance (ESR) in different classes of ferromagnetic thin films were reported. Amorphous and crystalline thin films of Mn-doped GaAs and GaN were studied for different Mn concentrations (0.5 -10%) and for hydrogenated films with the same Mn concentrations. The films have been deposited using pulsed laser deposition on c-axis (0001) oriented Al2O3 substrates.

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INTERMAG 2006 - IEEE International Magnetics Conference

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