超io - gb /s CMOS CML延迟控制缓冲电路的设计方法

K. Kishine, H. Inaba, Y. Ohtomo, M. Nakamura, Mitsuo Nakamura
{"title":"超io - gb /s CMOS CML延迟控制缓冲电路的设计方法","authors":"K. Kishine, H. Inaba, Y. Ohtomo, M. Nakamura, Mitsuo Nakamura","doi":"10.1109/MWSCAS.2012.6292092","DOIUrl":null,"url":null,"abstract":"A design method for an over-lOG-b/s buffer circuit for generating precise delay is proposed. A simple small-signal equivalent circuit model is introduced to investigate the delay characteristics of a current mode logic (CML) buffer circuit with load resistances. By setting the transconductance generator gm and output resistance in a MOSFET model as a function of drain current, the design equations for the delay and gain are derived. To confirm the validity of the design method, we fabricated buffer chain IC with the 65nm-MOSFET process and compared the measured and estimated delay. The errors between the measured and estimated delay are less than 15%, confirming the validity of the method.","PeriodicalId":324891,"journal":{"name":"2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Design method for an over-IO-Gb/s CMOS CML buffer circuit for delay control\",\"authors\":\"K. Kishine, H. Inaba, Y. Ohtomo, M. Nakamura, Mitsuo Nakamura\",\"doi\":\"10.1109/MWSCAS.2012.6292092\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A design method for an over-lOG-b/s buffer circuit for generating precise delay is proposed. A simple small-signal equivalent circuit model is introduced to investigate the delay characteristics of a current mode logic (CML) buffer circuit with load resistances. By setting the transconductance generator gm and output resistance in a MOSFET model as a function of drain current, the design equations for the delay and gain are derived. To confirm the validity of the design method, we fabricated buffer chain IC with the 65nm-MOSFET process and compared the measured and estimated delay. The errors between the measured and estimated delay are less than 15%, confirming the validity of the method.\",\"PeriodicalId\":324891,\"journal\":{\"name\":\"2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)\",\"volume\":\"107 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-09-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSCAS.2012.6292092\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.2012.6292092","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

提出了一种产生精确延迟的超对数b/s缓冲电路的设计方法。介绍了一种简单的小信号等效电路模型,用于研究带负载电阻的电流模式逻辑(CML)缓冲电路的延迟特性。通过在MOSFET模型中设置跨导发生器的gm和输出电阻作为漏极电流的函数,推导出延迟和增益的设计方程。为了验证设计方法的有效性,我们采用65nm-MOSFET工艺制作了缓冲链IC,并比较了测量和估计的延迟。实测时延与估计时延误差小于15%,验证了该方法的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design method for an over-IO-Gb/s CMOS CML buffer circuit for delay control
A design method for an over-lOG-b/s buffer circuit for generating precise delay is proposed. A simple small-signal equivalent circuit model is introduced to investigate the delay characteristics of a current mode logic (CML) buffer circuit with load resistances. By setting the transconductance generator gm and output resistance in a MOSFET model as a function of drain current, the design equations for the delay and gain are derived. To confirm the validity of the design method, we fabricated buffer chain IC with the 65nm-MOSFET process and compared the measured and estimated delay. The errors between the measured and estimated delay are less than 15%, confirming the validity of the method.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信