溅射(103)取向AlN及其SAW性能分析

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI:10.1109/ISAF.2007.4393398

Zhi-Xun Lin, Sean Wu, R. Ro, Maw-Shung Lee

{"title":"溅射(103)取向AlN及其SAW性能分析","authors":"Zhi-Xun Lin, Sean Wu, R. Ro, Maw-Shung Lee","doi":"10.1109/ISAF.2007.4393398","DOIUrl":null,"url":null,"abstract":"In this research, the (103) oriented AIN films were successfully sputtered on silicon to be a new composite surface acoustic wave (SAW) substrate. The crystalline structure of the films was determined by grazing incident angle X-ray diffraction (XRD) and the Full-Width Half-Maximum (FWHM) value of the (103) XRD peak was 0.288deg. The SAW properties of the (103) oriented AIN films on silicon had been theoretically analyzed. The simulation results showed the maximum Rayleigh velocity was about 5626 m/s and the maximum electromechanical coupling constant (K) was about 0.61%. It was found those SAW parameters of the (103)AlN/Si structure surpassed the ones of the (002)AlN/Si structure. The (103) oriented AIN films on silicon is a promising candidate applicable for the design of SAW devices.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"101 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Sputtering (103) Oriented AlN and its SAW Properties Analysis\",\"authors\":\"Zhi-Xun Lin, Sean Wu, R. Ro, Maw-Shung Lee\",\"doi\":\"10.1109/ISAF.2007.4393398\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this research, the (103) oriented AIN films were successfully sputtered on silicon to be a new composite surface acoustic wave (SAW) substrate. The crystalline structure of the films was determined by grazing incident angle X-ray diffraction (XRD) and the Full-Width Half-Maximum (FWHM) value of the (103) XRD peak was 0.288deg. The SAW properties of the (103) oriented AIN films on silicon had been theoretically analyzed. The simulation results showed the maximum Rayleigh velocity was about 5626 m/s and the maximum electromechanical coupling constant (K) was about 0.61%. It was found those SAW parameters of the (103)AlN/Si structure surpassed the ones of the (002)AlN/Si structure. The (103) oriented AIN films on silicon is a promising candidate applicable for the design of SAW devices.\",\"PeriodicalId\":321007,\"journal\":{\"name\":\"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics\",\"volume\":\"101 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2007.4393398\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2007.4393398","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

在本研究中，成功地将(103)取向的AIN薄膜溅射到硅上，作为一种新的复合表面声波(SAW)衬底。通过掠入射x射线衍射(XRD)测定了薄膜的晶体结构，XRD峰(103)的全宽半最大值(FWHM)值为0.288°。本文从理论上分析了(103)取向的氮化硅薄膜的SAW性能。仿真结果表明，最大瑞利速度约为5626 m/s，最大机电耦合常数K约为0.61%。结果表明，(103)AlN/Si结构的SAW参数优于(002)AlN/Si结构。在硅上制备(103)取向的AIN薄膜是一种很有前途的SAW器件设计候选材料。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Sputtering (103) Oriented AlN and its SAW Properties Analysis

In this research, the (103) oriented AIN films were successfully sputtered on silicon to be a new composite surface acoustic wave (SAW) substrate. The crystalline structure of the films was determined by grazing incident angle X-ray diffraction (XRD) and the Full-Width Half-Maximum (FWHM) value of the (103) XRD peak was 0.288deg. The SAW properties of the (103) oriented AIN films on silicon had been theoretically analyzed. The simulation results showed the maximum Rayleigh velocity was about 5626 m/s and the maximum electromechanical coupling constant (K) was about 0.61%. It was found those SAW parameters of the (103)AlN/Si structure surpassed the ones of the (002)AlN/Si structure. The (103) oriented AIN films on silicon is a promising candidate applicable for the design of SAW devices.

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2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics

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