具有欠调/过调电压检测和瞬态电流增强电路的快速瞬态响应无电容LDO稳压器

Pengfei Liao, Lin Pu, Kai Luo, Peng Li, Feng Yang, Guoqiang Wang, Xiaozong Huang
{"title":"具有欠调/过调电压检测和瞬态电流增强电路的快速瞬态响应无电容LDO稳压器","authors":"Pengfei Liao, Lin Pu, Kai Luo, Peng Li, Feng Yang, Guoqiang Wang, Xiaozong Huang","doi":"10.1117/12.2685808","DOIUrl":null,"url":null,"abstract":"The traditional capacitor-less LDO is analyzed and a fast-transient response capacitor-less LDO with transient-current enhanced circuit is proposed in this paper. The overshot/undershot voltage can be detected when the load current makes changed, the transient-current enhanced circuit, based on AC couple network, can achieve high charging/discharging current of the gate of power transistor to improve the transient of the LDO. Based on the proposed frequency strategy, the on-chip compensation capacitor required is reduced and the area of the chip is minimized. The circuit is simulated in a 0.13μm standard CMOS and the quiescent current is 30 μA. When the load current changes from 1-50mA at 1μs, the maximum overshot (undershot) voltage is 79mV (46mV) Compared to the LDO without transient enhance circuit, it is improved 60.5% and 58.2%, respectively.","PeriodicalId":305812,"journal":{"name":"International Conference on Electronic Information Technology","volume":"112 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A fast-transient response capacitor-less LDO regulator with undershoot/overshoot voltage detection and transient-current enhanced circuit\",\"authors\":\"Pengfei Liao, Lin Pu, Kai Luo, Peng Li, Feng Yang, Guoqiang Wang, Xiaozong Huang\",\"doi\":\"10.1117/12.2685808\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The traditional capacitor-less LDO is analyzed and a fast-transient response capacitor-less LDO with transient-current enhanced circuit is proposed in this paper. The overshot/undershot voltage can be detected when the load current makes changed, the transient-current enhanced circuit, based on AC couple network, can achieve high charging/discharging current of the gate of power transistor to improve the transient of the LDO. Based on the proposed frequency strategy, the on-chip compensation capacitor required is reduced and the area of the chip is minimized. The circuit is simulated in a 0.13μm standard CMOS and the quiescent current is 30 μA. When the load current changes from 1-50mA at 1μs, the maximum overshot (undershot) voltage is 79mV (46mV) Compared to the LDO without transient enhance circuit, it is improved 60.5% and 58.2%, respectively.\",\"PeriodicalId\":305812,\"journal\":{\"name\":\"International Conference on Electronic Information Technology\",\"volume\":\"112 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-08-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Electronic Information Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2685808\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Electronic Information Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2685808","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

分析了传统的无电容LDO,提出了一种具有瞬态电流增强电路的快速瞬态响应无电容LDO。当负载电流发生变化时,可以检测到过冲/欠冲电压,基于交流偶联网络的瞬态电流增强电路可以实现功率晶体管栅极的高充放电电流,改善LDO的瞬态性能。基于所提出的频率策略,减小了片上补偿电容的体积,减小了芯片的面积。该电路在0.13μm标准CMOS上进行仿真,静态电流为30 μA。负载电流在1μs范围内从1 ~ 50ma变化时,最大过冲(欠冲)电压为79mV (46mV),与不加暂态增强电路的LDO相比,分别提高了60.5%和58.2%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A fast-transient response capacitor-less LDO regulator with undershoot/overshoot voltage detection and transient-current enhanced circuit
The traditional capacitor-less LDO is analyzed and a fast-transient response capacitor-less LDO with transient-current enhanced circuit is proposed in this paper. The overshot/undershot voltage can be detected when the load current makes changed, the transient-current enhanced circuit, based on AC couple network, can achieve high charging/discharging current of the gate of power transistor to improve the transient of the LDO. Based on the proposed frequency strategy, the on-chip compensation capacitor required is reduced and the area of the chip is minimized. The circuit is simulated in a 0.13μm standard CMOS and the quiescent current is 30 μA. When the load current changes from 1-50mA at 1μs, the maximum overshot (undershot) voltage is 79mV (46mV) Compared to the LDO without transient enhance circuit, it is improved 60.5% and 58.2%, respectively.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信