单电子隧穿非对称隧道势垒

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116) Pub Date : 1998-10-19 DOI:10.1109/IWCE.1998.742730

S. Amakawa, M. Fujishima, K. Hoh

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引用次数: 1

摘要

讨论了单电子通过非对称隧道势垒的隧穿问题。本文提出了一种简单的方法，将随隧穿事件发生的障壁形状变化纳入隧道阻力的计算中。模拟结果表明，隧道穿过非对称隧道障碍物的方向性并不像以前报道的那样强，如果忽略障碍物形状的变化，甚至会产生非物理效应。

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Single-electron tunneling through an asymmetrical tunnel barrier

Issues pertaining to single-electron tunneling through an asymmetrical tunnel barrier are discussed. A simple means of incorporating the change in the barrier shape accompanying a tunneling event into calculation of tunnel resistance is proposed. Simulation results show that directionality of tunneling through asymmetrical tunnel barriers is not as strong as reported previously, and that even an unphysical effect could arise if the barrier shape change is neglected.

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来源期刊

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)

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