{"title":"基于表面态的zno异质结构2DEG和表面势垒高度建模","authors":"J. Ghosh","doi":"10.1109/EDSSC.2017.8126524","DOIUrl":null,"url":null,"abstract":"It is well known that a two-dimensional electron gas (2DEG) exists at the MgZnO/ZnO interface. Both the formation mechanism and the origin of this 2DEG is of immense interest. The origin has been attributed to the polarization charge present coupled with the donor-like surface states on the MgZnO surface. In this paper, a physics-based model is described to explain the 2DEG as well as the bare surface barrier height by considering the low density surface donor states distributed over a range of energies below a particular donor energy level. The model shows good agreement with the reported experimental results. The model for the 2DEG in a MgZnO/CdZnO heterostructure is also analyzed.","PeriodicalId":163598,"journal":{"name":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Modeling of 2DEG and surface barrier height in ZnO-based heterostructures using surface states\",\"authors\":\"J. Ghosh\",\"doi\":\"10.1109/EDSSC.2017.8126524\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is well known that a two-dimensional electron gas (2DEG) exists at the MgZnO/ZnO interface. Both the formation mechanism and the origin of this 2DEG is of immense interest. The origin has been attributed to the polarization charge present coupled with the donor-like surface states on the MgZnO surface. In this paper, a physics-based model is described to explain the 2DEG as well as the bare surface barrier height by considering the low density surface donor states distributed over a range of energies below a particular donor energy level. The model shows good agreement with the reported experimental results. The model for the 2DEG in a MgZnO/CdZnO heterostructure is also analyzed.\",\"PeriodicalId\":163598,\"journal\":{\"name\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2017.8126524\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2017.8126524","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling of 2DEG and surface barrier height in ZnO-based heterostructures using surface states
It is well known that a two-dimensional electron gas (2DEG) exists at the MgZnO/ZnO interface. Both the formation mechanism and the origin of this 2DEG is of immense interest. The origin has been attributed to the polarization charge present coupled with the donor-like surface states on the MgZnO surface. In this paper, a physics-based model is described to explain the 2DEG as well as the bare surface barrier height by considering the low density surface donor states distributed over a range of energies below a particular donor energy level. The model shows good agreement with the reported experimental results. The model for the 2DEG in a MgZnO/CdZnO heterostructure is also analyzed.