铜/低钾技术的清洁/带材加工的挑战

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Pub Date : 2004-06-07 DOI:10.1109/IITC.2004.1345739

M. Baklanov, Q. Le, E. Kesters, F. Iacopi, J. van Aelst, H. Struyf, W. Boullart, Vanhaelemeersch, K. Maex

{"title":"铜/低钾技术的清洁/带材加工的挑战","authors":"M. Baklanov, Q. Le, E. Kesters, F. Iacopi, J. van Aelst, H. Struyf, W. Boullart, Vanhaelemeersch, K. Maex","doi":"10.1109/IITC.2004.1345739","DOIUrl":null,"url":null,"abstract":"This presentation is an overview of clean/strip processing for low Cu/low-k technology. The paper starts with a brief analysis of dry etch processes that determine the issues in subsequent processes; in the case of porous low-k dielectrics, etch conditions must be carefully optimized to find an optimal balance between the polymer formation and plasma damage of low-k dielectrics. The presentation includes recent results related to dry and wet cleaning, plasma damage, and stability of low-k films. The wet cleaning of solutions using supercritical CO/sub 2/(SCCO/sub 2/)IPA/water mixtures and special surfactants will also be analyzed. Results obtained by different advanced techniques like FTIR, XPS, ellipsometric porosimetry (EP), energy filtered TEM (EFTEM), TOF SIMS etc have been used to characterize the residues, plasma damage and cleaning efficiency and they will be analyzed during the presentation.","PeriodicalId":148010,"journal":{"name":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Challenges of clean/strip processing for Cu/low-k technology\",\"authors\":\"M. Baklanov, Q. Le, E. Kesters, F. Iacopi, J. van Aelst, H. Struyf, W. Boullart, Vanhaelemeersch, K. Maex\",\"doi\":\"10.1109/IITC.2004.1345739\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This presentation is an overview of clean/strip processing for low Cu/low-k technology. The paper starts with a brief analysis of dry etch processes that determine the issues in subsequent processes; in the case of porous low-k dielectrics, etch conditions must be carefully optimized to find an optimal balance between the polymer formation and plasma damage of low-k dielectrics. The presentation includes recent results related to dry and wet cleaning, plasma damage, and stability of low-k films. The wet cleaning of solutions using supercritical CO/sub 2/(SCCO/sub 2/)IPA/water mixtures and special surfactants will also be analyzed. Results obtained by different advanced techniques like FTIR, XPS, ellipsometric porosimetry (EP), energy filtered TEM (EFTEM), TOF SIMS etc have been used to characterize the residues, plasma damage and cleaning efficiency and they will be analyzed during the presentation.\",\"PeriodicalId\":148010,\"journal\":{\"name\":\"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2004.1345739\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2004.1345739","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

本报告概述了低铜/低钾技术的清洁/带材加工。本文首先简要分析了干蚀刻工艺，确定了后续工艺中存在的问题;在多孔低k介电体的情况下，必须仔细优化蚀刻条件，以找到聚合物形成和低k介电体损伤之间的最佳平衡。报告包括干法和湿法清洗、等离子体损伤和低钾薄膜稳定性的最新研究结果。还将分析超临界CO/sub 2/(SCCO/sub 2/)IPA/水混合物和特殊表面活性剂对溶液的湿式清洗。利用FTIR、XPS、椭圆孔隙度测定(EP)、能量过滤TEM (EFTEM)、TOF SIMS等先进技术对残留物、等离子体损伤和清洁效率进行了表征，并将在报告中进行分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Challenges of clean/strip processing for Cu/low-k technology

This presentation is an overview of clean/strip processing for low Cu/low-k technology. The paper starts with a brief analysis of dry etch processes that determine the issues in subsequent processes; in the case of porous low-k dielectrics, etch conditions must be carefully optimized to find an optimal balance between the polymer formation and plasma damage of low-k dielectrics. The presentation includes recent results related to dry and wet cleaning, plasma damage, and stability of low-k films. The wet cleaning of solutions using supercritical CO/sub 2/(SCCO/sub 2/)IPA/water mixtures and special surfactants will also be analyzed. Results obtained by different advanced techniques like FTIR, XPS, ellipsometric porosimetry (EP), energy filtered TEM (EFTEM), TOF SIMS etc have been used to characterize the residues, plasma damage and cleaning efficiency and they will be analyzed during the presentation.

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来源期刊

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)

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