紧凑层次化流形微通道散热阵列流动沸腾的实验研究

Kevin P. Drummond, J. Weibel, S. Garimella
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引用次数: 8

摘要

本文研究了一种用于芯片内高热流通量散热的两相层叠流形微通道散热阵列的制备和实验表征。测试装置具有5mm × 5mm的加热面积和9 × 9的散热片阵列,每个散热片有18个平行通道(19 μ m × 155 μ m),由硅制成。在散热片阵列上粘接了用硅材料制成的多层分层流形。以HFE-7100为工质,在质量通量为200 kg/m2s和300 kg/m2s下进行了流动沸腾实验。在芯片温度低于流体温度40℃、压降低于80kpa的条件下,测试装置的散热流量可达445w /cm2。当质量通量为300 kg/m2s,热流密度为301 W/cm2时,传热系数最大值为31,900 W/m2K。研究了热流密度对芯片温度、换热系数和压降的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Experimental study of flow boiling in a compact hierarchical manifold microchannel heat sink array
This work focuses on the fabrication and experimental characterization of a two-phase hierarchical manifold microchannel heat sink array for intrachip high-heat-flux dissipation. A test device with a 5 mm × 5 mm heated area and 9 × 9 array of heat sinks, each with 18 parallel channels (19 µm × 155 µm), is fabricated in silicon. A multi-layer hierarchical manifold fabricated in silicon is bonded to the heat sink array. Flow boiling experiments are conducted using HFE-7100 as the working fluid at mass fluxes of 200 kg/m2s and 300 kg/m2s. The test device is able to dissipate heat fluxes up to 445 W/cm2 at a chip temperature of less than 40 °C above the fluid and at a pressure drop less than 80 kPa. A maximum heat transfer coefficient of 31,900 W/m2K occurred at a mass flux of 300 kg/m2s and a heat flux of 301 W/cm2. The effects of heat flux on chip temperature, heat transfer coefficient, and pressure drop are investigated.
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