K. Klimczak, J. Szmidt, A. Olszyna, M. Bakowski, A. Barcz
{"title":"SiC上沉积AlN层的基本性质","authors":"K. Klimczak, J. Szmidt, A. Olszyna, M. Bakowski, A. Barcz","doi":"10.1109/WBL.2001.946583","DOIUrl":null,"url":null,"abstract":"Summary form only given. AlN films were deposited on silicon carbide wafers by RPP (Reactive Pulse Plasma) method. Basic properties of the AlN layers and AlN-SiC interface have been investigated. We have extracted electrical properties from current-voltage characteristics, investigated surface structure by scanning electron microscopy (SEM), chemical composition of AlN layers by secondary ion mass spectroscopy (SIMS) and layer thickness by spectroscopic ellipsometry measurements.","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Basic properties of AlN layers deposited onto SiC\",\"authors\":\"K. Klimczak, J. Szmidt, A. Olszyna, M. Bakowski, A. Barcz\",\"doi\":\"10.1109/WBL.2001.946583\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. AlN films were deposited on silicon carbide wafers by RPP (Reactive Pulse Plasma) method. Basic properties of the AlN layers and AlN-SiC interface have been investigated. We have extracted electrical properties from current-voltage characteristics, investigated surface structure by scanning electron microscopy (SEM), chemical composition of AlN layers by secondary ion mass spectroscopy (SIMS) and layer thickness by spectroscopic ellipsometry measurements.\",\"PeriodicalId\":246239,\"journal\":{\"name\":\"Journal of Wide Bandgap Materials\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Wide Bandgap Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WBL.2001.946583\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Wide Bandgap Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WBL.2001.946583","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Summary form only given. AlN films were deposited on silicon carbide wafers by RPP (Reactive Pulse Plasma) method. Basic properties of the AlN layers and AlN-SiC interface have been investigated. We have extracted electrical properties from current-voltage characteristics, investigated surface structure by scanning electron microscopy (SEM), chemical composition of AlN layers by secondary ion mass spectroscopy (SIMS) and layer thickness by spectroscopic ellipsometry measurements.
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