电介质或半导体膜涂层金属阴极的场发射能谱精细结构

I. S. Turmyshev, A. Murzakaev, O. Timoshenkova
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引用次数: 0

摘要

本文研究了薄膜异质结构在场发射过程中的能谱精细结构行为。已知在介质或半导体薄膜覆盖的金属阴极的场发射能谱中出现精细结构,但对这种现象的规律还没有详细的研究。本文介绍了用传递矩阵法计算薄膜覆盖金属阴极场发射能谱的一些结果,并与实验数据进行了相关的尝试。研究了钨硅、钨碳和钨氧化锆异质结构阴极。根据笔者提出的金属尖端场发射过程的计算方法,对前人的实验数据进行了总结。计算还发现,在一定的薄膜宽度和发射电压条件下,在亮度较高的情况下,在技术上可以分离出具有极薄半宽能谱的特定峰。得到了薄膜异质结构场发射过程的计算结果与实验结果之间良好的相关性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Field emission energy spectra fine structure for metallic cathodes coated by dielectric or semiconductor films
Presented item deals with investigations of energy spectra fine structure behavior during field emission process for thin film hetero-structures. It is known that fine structures appear in field emission energy spectra for metallic cathodes covered by dielectric or semiconductor thin films, but there is no detailed investigation of rules of such phenomenon. This work presents some results of correlation attempt between transfer matrix method of calculation field emission energy spectrum for metallic cathodes covered by thin film and experimental data obtained for such objects. Tungsten-silicon, tungsten-carbon and tungsten-zirconia hetero-structure cathodes are under consideration. The summary of experimental data of some previous papers is under discussion in terms of computation methods suggested earlier and developed by authors for metallic tip field emission process. It is also discovered from computation that under some conditions of film width and emission voltage it is technically possible to separate particular peak with very thin half-width of energy spectrum while brightness is high. Good correlation between computation and experimental results of field emission process for thin film hetero-structure is obtained.
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