基于多门控晶体管和阻性源退化的移动WiMAX 2.4 ghz CMOS驱动放大器

Jongsik Kim, Tae Wook Kim, M. Jeong, Boeun Kim, Hyunchol Shin
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引用次数: 12

摘要

CMOS驱动放大器采用两种设计技术来提高其宽输出功率水平的线性度。首先,具有两个辅助晶体管的多门控晶体管(MGTR)技术比具有单个辅助晶体管的多门控晶体管进一步扩展了线性区域。其次,阻性源退化显著抑制了由电感源退化引起的不必要的二次谐波反馈效应。一个2.4 ghz差分驱动放大器已经在0.18 μ m CMOS中实现,用于移动WiMAX和韩国WiBro应用。结果表明,OIP3为>+20dBm的线性区域扩展到输出功率为-5 dBm,最大OIP3为+28 dBm, OPldB为+7.8 dBm,功率增益为9.2 dB,直流功耗为1.8V, 18.7 mA。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 2.4-GHz CMOS Driver Amplifier Based on Multiple-Gated Transistor and Resistive Source Degeneration for Mobile WiMAX
A CMOS driver amplifier employs two design techniques to improve its linearity in wide output power level. First, multiple-gated transistor (MGTR) technique with two auxiliary transistors extends the linear region further compared with MGTR with single auxiliary transistor. Second, resistive source degeneration significantly suppresses the unwanted 2nd-harmonic feedback effect caused by an inductive source degeneration. A 2.4-GHz differential driver amplifier has been implemented in 0.18 mum CMOS for Mobile WiMAX and Korean WiBro applications. It shows that the linear region with OIP3 of >+20dBm is extended up to an output power of -5 dBm, while achieving a maximum OIP3 of +28 dBm, OPldB of +7.8 dBm, and a power gain of 9.2 dB with dc power consumption of 1.8V and 18.7 mA.
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