{"title":"半导体激光器用亚稳态III/V材料","authors":"L. Mawst","doi":"10.1109/IPCon.2019.8908299","DOIUrl":null,"url":null,"abstract":"Metastable materials that lie within the miscibility gaps of their equilibrium phase diagrams, as well as the development of lattice-parameter-engineered virtual substrates, offer means to greatly expand the material platforms available for semiconductor lasers to enable higher performance and an increased span of emission wavelengths.","PeriodicalId":314151,"journal":{"name":"2019 IEEE Photonics Conference (IPC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Metastable III/V Materials for Semiconductor Lasers\",\"authors\":\"L. Mawst\",\"doi\":\"10.1109/IPCon.2019.8908299\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Metastable materials that lie within the miscibility gaps of their equilibrium phase diagrams, as well as the development of lattice-parameter-engineered virtual substrates, offer means to greatly expand the material platforms available for semiconductor lasers to enable higher performance and an increased span of emission wavelengths.\",\"PeriodicalId\":314151,\"journal\":{\"name\":\"2019 IEEE Photonics Conference (IPC)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE Photonics Conference (IPC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPCon.2019.8908299\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE Photonics Conference (IPC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPCon.2019.8908299","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Metastable III/V Materials for Semiconductor Lasers
Metastable materials that lie within the miscibility gaps of their equilibrium phase diagrams, as well as the development of lattice-parameter-engineered virtual substrates, offer means to greatly expand the material platforms available for semiconductor lasers to enable higher performance and an increased span of emission wavelengths.