III-V膜器件与超紧凑SOI波导的异质集成

Digest of the LEOS Summer Topical Meetings Biophotonics/Optical Interconnects and VLSI Photonics/WBM Microcavities, 2004. Pub Date : 2004-06-28 DOI:10.1109/LEOSST.2004.1338686

G. Roelkens, D. Vanthourhout, R. Baets

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引用次数: 8

摘要

本文主要研究了III-V型光电器件与超紧凑SOI波导的异质集成。提出了III-V与SOI的键合耦合方案。第一种设计是基于薄膜自旋玻璃(SOG)粘合剂粘合层。得到了厚度小于0.5 /spl mu/m的键合层。第二种设计是基于厚膜苯并环丁烯键合(BCB)。可实现1 /spl μ m以上的键合层厚度。

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Heterogeneous integration of III-V membrane devices and ultracompact SOI waveguides

In this paper we focus on the heterogeneous integration of III-V opto-electronic devices and ultracompact SOI waveguides. The bonding coupling scheme of III-V and SOI is proposed. The first design is based on a thin film spin-on glass (SOG) adhesive bonding layer. Bonding layer thickness below 0.5 /spl mu/m have been presented. The second design is based on a thick film benzocyclobutene bonding (BCB). Bonding layer thickness above 1 /spl mu/m is readily achievable.

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来源期刊

Digest of the LEOS Summer Topical Meetings Biophotonics/Optical Interconnects and VLSI Photonics/WBM Microcavities, 2004.

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