用局部厚度减薄工艺制备硅光子器件的垂直锥度结构

S. Abe, H. Hara, S. Masuda, H. Yamada
{"title":"用局部厚度减薄工艺制备硅光子器件的垂直锥度结构","authors":"S. Abe, H. Hara, S. Masuda, H. Yamada","doi":"10.23919/MOC52031.2021.9598154","DOIUrl":null,"url":null,"abstract":"We have developed a simple fabrication process of low-insertion-loss vertical-taper structures which can locally optimize the Si thickness of silicon-photonic devices. Fabricated vertical-taper structures realized the conversion of Si-waveguide thickness from 400 nm to 220 nm, whose insertion loss was measured to be less than 0.5 dB.","PeriodicalId":355935,"journal":{"name":"2021 26th Microoptics Conference (MOC)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication of Vertical-Taper Structures for Silicon Photonic Devices by Local-Thickness-Thinning Process\",\"authors\":\"S. Abe, H. Hara, S. Masuda, H. Yamada\",\"doi\":\"10.23919/MOC52031.2021.9598154\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed a simple fabrication process of low-insertion-loss vertical-taper structures which can locally optimize the Si thickness of silicon-photonic devices. Fabricated vertical-taper structures realized the conversion of Si-waveguide thickness from 400 nm to 220 nm, whose insertion loss was measured to be less than 0.5 dB.\",\"PeriodicalId\":355935,\"journal\":{\"name\":\"2021 26th Microoptics Conference (MOC)\",\"volume\":\"112 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 26th Microoptics Conference (MOC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/MOC52031.2021.9598154\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 26th Microoptics Conference (MOC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/MOC52031.2021.9598154","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

我们开发了一种简单的低插入损耗垂直锥结构的制造工艺,可以局部优化硅光子器件的硅厚度。制作的垂直锥形结构实现了硅波导厚度从400 nm到220 nm的转换,其插入损耗小于0.5 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fabrication of Vertical-Taper Structures for Silicon Photonic Devices by Local-Thickness-Thinning Process
We have developed a simple fabrication process of low-insertion-loss vertical-taper structures which can locally optimize the Si thickness of silicon-photonic devices. Fabricated vertical-taper structures realized the conversion of Si-waveguide thickness from 400 nm to 220 nm, whose insertion loss was measured to be less than 0.5 dB.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信