全耗尽双栅FinFET的子电路模型，包括氧化物和界面捕获电荷的影响

IEEE EUROCON 2015 - International Conference on Computer as a Tool (EUROCON) Pub Date : 2015-11-02 DOI:10.1109/EUROCON.2015.7313741

Tatjana Pesic-Brdjanin, N. Jankovic

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引用次数: 1

摘要

本文介绍了一种在全耗尽双栅FinFET标准SPICE模型中考虑氧化物和界面捕获电荷影响的方法。它基于与FinFET的栅极输入串联的辅助子电路，该子电路负责由于捕获电荷而引起的偏置相关电压漂移。通过二维TCAD仿真验证了子电路模型的有效性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Sub-sircuit model of fully-depleted double-gate FinFET including the effects of oxide and interface trapped charge

In this paper, a method for including the effects of oxide and interface trapped charge in standard SPICE model of fully-depleted double-gate FinFET is described. It is based on the auxiliary sub-circuit connected in series with the gate input of FinFET which accounts for the bias-dependent voltage shifts due to the trapped charge. The sub-circuit model efficiency is verified using two-dimensional TCAD device simulations.

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IEEE EUROCON 2015 - International Conference on Computer as a Tool (EUROCON)

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