一种用于MRI的低噪声CMOS接收器前端

J. Anders, G. Boero
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引用次数: 16

摘要

本文描述了一种用于微磁共振成像(micro- mri)应用的集成接收器前端的新架构。当芯片从3.3 V电源中仅消耗9 mA电源电流(LNA为4 mA,输出缓冲器为5 mA)时,其测量输入参考噪声密度仅为0.6 nV/radic(Hz)。接收器由接收线圈、片上调谐电容器、低噪声放大器和50 ω输出缓冲器组成。该系统设计用于在7t的b0场中运行,对应于300 MHz的频率。它在0.35 μ m CMOS高压工艺中实现,占据850 μ m × 500 μ m的芯片面积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A low-noise CMOS receiver frontend for MRI
In this paper a novel architecture for an integrated receiver front-end for micro magnetic resonance imaging (micro-MRI) applications is described. While the chip consumes only 9 mA supply current (4 mA in the LNA and 5 mA in the output buffer) from a 3.3 V power supply, it has a measured input referred noise density of only 0.6 nV/radic(Hz). The receiver consists of a reception coil, an on-chip tuning capacitor, a low-noise amplifier, and a 50 Omega output buffer. The system is designed for operation in a B0-field of 7 T corresponding to a frequency of 300 MHz. It is implemented in a 0.35 mum CMOS high-voltage process and occupies a chip area of 850 mum times 500 mum.
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