MWCNT束作为高性能集成电路的VLSI互连的热感知建模和性能

K. S. Sandha, B. Raj
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引用次数: 0

摘要

近年来,MWCNT束互连已被认为是传统铜互连的替代方案。本文研究了温度对MWCNT束作为互连材料的平均自由程的影响。利用温度相关的MFP来评估纳米级技术节点的MWCNT束阻抗参数。此外,对铜互连进行了类似的分析,以将结果与MWCNT束进行比较。结果表明,在32nm、22nm和16nm技术节点上,MWCNT互连在200K-450K温度范围内提供了比铜互连更小的电阻。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermally aware modeling and performance for MWCNT bundle as VLSI interconnects for high performance integrated circuits
In the recent times MWCNT bundle interconnects at global interconnect level, has been considered as an alternative to the conventional copper interconnects. In this paper, the influence of temperature on mean free path (MFP) of MWCNT bundle as interconnects is presented. The temperature dependent MFP is used to evaluate the impedance parameters of MWCNT bundle for nanoscaled technology nodes. Further, a similar analysis is performed for copper interconnects to compare the results with MWCNT bundle. Results show that MWCNT interconnects offered lesser resistances compared to copper interconnects for temperature ranging from 200K-450K at 32nm, 22nm and 16nm technology nodes.
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