{"title":"MWCNT束作为高性能集成电路的VLSI互连的热感知建模和性能","authors":"K. S. Sandha, B. Raj","doi":"10.1109/GCCE.2015.7398702","DOIUrl":null,"url":null,"abstract":"In the recent times MWCNT bundle interconnects at global interconnect level, has been considered as an alternative to the conventional copper interconnects. In this paper, the influence of temperature on mean free path (MFP) of MWCNT bundle as interconnects is presented. The temperature dependent MFP is used to evaluate the impedance parameters of MWCNT bundle for nanoscaled technology nodes. Further, a similar analysis is performed for copper interconnects to compare the results with MWCNT bundle. Results show that MWCNT interconnects offered lesser resistances compared to copper interconnects for temperature ranging from 200K-450K at 32nm, 22nm and 16nm technology nodes.","PeriodicalId":363743,"journal":{"name":"2015 IEEE 4th Global Conference on Consumer Electronics (GCCE)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thermally aware modeling and performance for MWCNT bundle as VLSI interconnects for high performance integrated circuits\",\"authors\":\"K. S. Sandha, B. Raj\",\"doi\":\"10.1109/GCCE.2015.7398702\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the recent times MWCNT bundle interconnects at global interconnect level, has been considered as an alternative to the conventional copper interconnects. In this paper, the influence of temperature on mean free path (MFP) of MWCNT bundle as interconnects is presented. The temperature dependent MFP is used to evaluate the impedance parameters of MWCNT bundle for nanoscaled technology nodes. Further, a similar analysis is performed for copper interconnects to compare the results with MWCNT bundle. Results show that MWCNT interconnects offered lesser resistances compared to copper interconnects for temperature ranging from 200K-450K at 32nm, 22nm and 16nm technology nodes.\",\"PeriodicalId\":363743,\"journal\":{\"name\":\"2015 IEEE 4th Global Conference on Consumer Electronics (GCCE)\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 4th Global Conference on Consumer Electronics (GCCE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GCCE.2015.7398702\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 4th Global Conference on Consumer Electronics (GCCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GCCE.2015.7398702","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermally aware modeling and performance for MWCNT bundle as VLSI interconnects for high performance integrated circuits
In the recent times MWCNT bundle interconnects at global interconnect level, has been considered as an alternative to the conventional copper interconnects. In this paper, the influence of temperature on mean free path (MFP) of MWCNT bundle as interconnects is presented. The temperature dependent MFP is used to evaluate the impedance parameters of MWCNT bundle for nanoscaled technology nodes. Further, a similar analysis is performed for copper interconnects to compare the results with MWCNT bundle. Results show that MWCNT interconnects offered lesser resistances compared to copper interconnects for temperature ranging from 200K-450K at 32nm, 22nm and 16nm technology nodes.