{"title":"大功率MOSFET计算机模型","authors":"H. Nienhaus, J. Bowers, P. C. Herren","doi":"10.1109/PESC.1980.7089438","DOIUrl":null,"url":null,"abstract":"This paper describes a non-linear computer model for high power MOS field effect transistors, along with techniques for determining the model parameters from a data sheet. A comparison of data sheet vs. computer simulated drain characteristics and transient response indicates excellent correlation.","PeriodicalId":227481,"journal":{"name":"1980 IEEE Power Electronics Specialists Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":"{\"title\":\"A high power MOSFET computer model\",\"authors\":\"H. Nienhaus, J. Bowers, P. C. Herren\",\"doi\":\"10.1109/PESC.1980.7089438\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a non-linear computer model for high power MOS field effect transistors, along with techniques for determining the model parameters from a data sheet. A comparison of data sheet vs. computer simulated drain characteristics and transient response indicates excellent correlation.\",\"PeriodicalId\":227481,\"journal\":{\"name\":\"1980 IEEE Power Electronics Specialists Conference\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1980-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"26\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1980 IEEE Power Electronics Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1980.7089438\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1980.7089438","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper describes a non-linear computer model for high power MOS field effect transistors, along with techniques for determining the model parameters from a data sheet. A comparison of data sheet vs. computer simulated drain characteristics and transient response indicates excellent correlation.
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