B. Schwitter, A. Parker, S. Albahrani, A. Fattorini, M. Heimlich
{"title":"GaAs MMIC pHEMT栅极金属测温","authors":"B. Schwitter, A. Parker, S. Albahrani, A. Fattorini, M. Heimlich","doi":"10.1109/MWSYM.2013.6697358","DOIUrl":null,"url":null,"abstract":"A thermal resistance measurement technique which exploits the thermal response of a GaAs pHEMT's gate metal resistance is examined. It is found that gate leakage (hole) current due to impact ionization can interfere with the measurement, but can be avoided with correct choice of bias. Measurements and thermal simulations conclude that the bias dependence of the channel heat source profile needs to be considered to improve the accuracy of channel temperature estimation.","PeriodicalId":128968,"journal":{"name":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"GaAs MMIC pHEMT gate metal thermometry\",\"authors\":\"B. Schwitter, A. Parker, S. Albahrani, A. Fattorini, M. Heimlich\",\"doi\":\"10.1109/MWSYM.2013.6697358\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A thermal resistance measurement technique which exploits the thermal response of a GaAs pHEMT's gate metal resistance is examined. It is found that gate leakage (hole) current due to impact ionization can interfere with the measurement, but can be avoided with correct choice of bias. Measurements and thermal simulations conclude that the bias dependence of the channel heat source profile needs to be considered to improve the accuracy of channel temperature estimation.\",\"PeriodicalId\":128968,\"journal\":{\"name\":\"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2013.6697358\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE MTT-S International Microwave Symposium Digest (MTT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2013.6697358","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A thermal resistance measurement technique which exploits the thermal response of a GaAs pHEMT's gate metal resistance is examined. It is found that gate leakage (hole) current due to impact ionization can interfere with the measurement, but can be avoided with correct choice of bias. Measurements and thermal simulations conclude that the bias dependence of the channel heat source profile needs to be considered to improve the accuracy of channel temperature estimation.
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