可靠的自旋扭矩MRAM产品技术

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI:10.1109/IEDM.2016.7838467

J. Slaughter, K. Nagel, R. Whig, S. Deshpande, S. Aggarwal, M. Deherrera, J. Janesky, M. Lin, H. Chia, M. Hossain, S. Ikegawa, F. Mancoff, G. Shimon, J. Sun, M. Tran, T. Andre, S. Alam, F. Poh, J. Lee, Y. Chow, Y. Jiang, H. Liu, C. Wang, S. Noh, T. Tahmasebi, S. Ye, D. Shum

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引用次数: 20

摘要

在本文中，我们概述了可靠和可制造的ST-MRAM的重要特性，以及两个领域的新成果:具有足够数据保留的pMTJ阵列，可在260°C波峰焊之前进行编程，以及256Mb DDR3 ST-MRAM产品芯片的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Technology for reliable spin-torque MRAM products

In this paper we present an overview of important features for reliable and manufacturable ST-MRAM as well as new results in two areas: pMTJ arrays with data retention sufficient for programming before 260°C wave solder, and performance of a 256Mb, DDR3 ST-MRAM product chip.

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2016 IEEE International Electron Devices Meeting (IEDM)

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