Characterization of photoresist etching in KOH silicon etchant using microneedle masking design

This paper discussed on photoresist etching characterization in 5 % KOH etchant. The work that has been done at UTHM clean room, consists of three main experiment parameters which are bake time, spin speed, and UV expose time. The mask pattern used in this work is based on microneedle array masking design. The observations were done in term of, photoresist thickness and percentage photoresist remaining after wet etching process. The positive resist, PR-2000 was used for the work and grid approximation based on high resolution imaging microscope was used as statistical technique to characterize the effect. The obtained etching behaviors on every microneedle masking array will be useful to assist in developing recipes to fabricate microneedle microstructure.