{"title":"栅极氧化物短路的计算应力测试","authors":"V. Dabholkar, S. Chakravarty","doi":"10.1109/ICVD.1998.646637","DOIUrl":null,"url":null,"abstract":"Reliability screens are used to reduce infant mortality. The quality of the stress test set used during the screening process has a direct bearing on the effectiveness of the screen. We present a formal study of the problem of computing good quality stress tests for gate-oxide shorts which is the cause of much of the reliability problems. A method to compute stress test which is better than the popular method of using I/sub DDQ/ vectors is presented.","PeriodicalId":139023,"journal":{"name":"Proceedings Eleventh International Conference on VLSI Design","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Computing stress tests for gate-oxide shorts\",\"authors\":\"V. Dabholkar, S. Chakravarty\",\"doi\":\"10.1109/ICVD.1998.646637\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Reliability screens are used to reduce infant mortality. The quality of the stress test set used during the screening process has a direct bearing on the effectiveness of the screen. We present a formal study of the problem of computing good quality stress tests for gate-oxide shorts which is the cause of much of the reliability problems. A method to compute stress test which is better than the popular method of using I/sub DDQ/ vectors is presented.\",\"PeriodicalId\":139023,\"journal\":{\"name\":\"Proceedings Eleventh International Conference on VLSI Design\",\"volume\":\"86 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-01-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings Eleventh International Conference on VLSI Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICVD.1998.646637\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings Eleventh International Conference on VLSI Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICVD.1998.646637","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reliability screens are used to reduce infant mortality. The quality of the stress test set used during the screening process has a direct bearing on the effectiveness of the screen. We present a formal study of the problem of computing good quality stress tests for gate-oxide shorts which is the cause of much of the reliability problems. A method to compute stress test which is better than the popular method of using I/sub DDQ/ vectors is presented.
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