RGS工艺制备硅带结晶的显微组织分析

Ingo Steinbach, H. Hofs
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引用次数: 11

摘要

采用数值模拟的方法分析了RGS工艺制备的多晶硅带的微观组织演变过程。结晶模型考虑了硅的分面生长结构、结晶前沿的热过冷以及依赖于热过冷的成核。带状结晶的热条件取自德国拜耳公司对RGS过程的宏观有限元模拟。讨论了不同的结晶形态——单晶、柱状多晶或枝状晶——对工艺和成核条件的依赖性。数值结果与在德国拜耳公司中试工厂生长的硅带的形貌进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Microstructural analysis of the crystallization of silicon ribbons produced by the RGS process
The microstructural evolution of multicrystalline silicon ribbons produced by the RGS process (ribbon growth on substrate) is analysed by numerical simulation. The crystallization model takes into account the facetted growth structure of silicon, thermal supercooling in front of the crystallization front and nucleation dependent on the thermal supercooling. The thermal conditions for the crystallization of the ribbon are taken from a macroscopic finite element simulation of the RGS process, as it is realized at Bayer AG, Germany. Different crystallization morphologies-single crystal, columnar multicrystal or dendritic-are discussed in their dependence on the process and nucleation conditions. The numerical results are compared to morphologies of silicon ribbons, grown on the pilot plant of Bayer AG, Germany.
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