基于双极晶体管的紧凑高效多晶门库

J. Nevoral, Václav Simek, R. Ruzicka
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引用次数: 3

摘要

本文的主要目标是基于合适类型的可重构晶体管提出一个紧凑的多态门库。事实上,它们的开发为复杂多晶电路的空间高效合成带来了显著的优势。这些晶体管的实际性能与所谓的双极性特性密切相关。这个特殊的方面只是允许选择晶体管结构的n或p通道工作模式,这是通过在专用控制电极上切换电压水平来控制的。这些门是通过使用笛卡尔遗传规划的进化方法开发的。采用了考虑阈值电压降退化效应的各种离散开关级双极晶体管模型。设计了多种多态门,与传统方法相比,这清楚地显示出显著的晶体管节省。最后,属于该库的单个元件也为如何大大减小复杂多晶电路的目标尺寸提供了机会。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Compact library of efficient polymorphic gates based on ambipolar transistors
Main goal of this paper is to propose a compact library of polymorphic gates based on suitable type of reconfigurable transistors. In fact, their exploitation brings a significant advantage for space-efficient synthesis of complex polymorphic circuits. Actual behaviour of those transistors closely depends on so called ambipolar property. That particular aspect simply allows the selection of n- or p- channel operating mode of the transistor structures which is controlled by means of switching the voltage level at a dedicated control electrode. The gates were developed by an evolution approach using Cartesian genetic programming. Various discrete switch-level ambipolar transistor models extended by taking into account the threshold voltage drop degradation effect were used. A diverse range of polymorphic gates were designed, which clearly shows significant transistor savings compared to the conventional approaches. Finally, the individual components that belong to the library also suggest the opportunity how to considerably reduce the target size of complex polymorphic circuits.
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