GaAs和InP HEMT二极管的大信号提取方法

Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits Pub Date : 1994-10-05 DOI:10.1109/INMMC.1994.512523

D. Schreurs, S. Herrebout, B. Nauwelaers, W. De Raedt, Y. Baeyens, M. Van Rossum, M. Coady

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引用次数: 1

摘要

用于模拟应用的HEMT二极管模型应该在整个门源电压(T/sub /)范围内有效。提取HEMT二极管的小信号等效方案的主要困难在于，与晶体管提取方法相反，无法明确区分外在因素(冷场效应管测量)和内在因素(热场效应管测量)的计算。这意味着在冷场效应管提取方法中使用的近似必须进行审查。这是测定电阻的一个特殊问题。

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Large-signal extraction method for GaAs and InP HEMT diodes

A HEMT diode model intended for analog applications should be valid over the whole gate-source voltage (T/sub gs/) range. The main difficulty of extracting the small-signal equivalent scheme of a HEMT diode, is that, contrary to the transistor extraction method, no clear distinction can be made between the calculation of the extrinsic elements (cold-FET measurements) and the intrinsic elements (hot-FET measurements). This implies that approximations used in the cold-FET extraction approach have to be reviewed. This is a particular problem for the determination of the resistances.

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Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits

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