基于三维TCAD的纳米器件ESD失效评估方法

2010 International SoC Design Conference Pub Date : 2010-11-01 DOI:10.1109/SOCDC.2010.5682919

M. Shrivastava, H. Gossner, M. Baghini, V. Rao

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引用次数: 13

摘要

本文展示了一种基于3D TCAD的方法，用于先进ESD保护概念的纳米级器件的评估和预硅开发。讨论了各种物理模型和参数对ESD优值预测精度的影响。此外，各种设备的选择，已经从三维TCAD模拟进行了评估。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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3D TCAD based approach for the evaluation of nanoscale devices during ESD failure

This paper demonstrates a 3D TCAD based approach towards the evaluation and pre-silicon development of nanoscale devices for advanced ESD protection concepts. Impact of various physical models and parameters on the accuracy of predicted ESD figures of merit are discussed. Moreover, various devices options, have been evaluated from 3D TCAD simulations.

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2010 International SoC Design Conference

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