InGaP/GaAs DHBT的互调失真特性与分析

High Frequency Postgraduate Student Colloquium, 2004 Pub Date : 2004-11-30 DOI:10.1109/HFPSC.2004.1360384

A. Khan, C. N. Dharmasiri, A. Rezazadeh

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引用次数: 0

摘要

研究了微波InGaP/GaAs双异质结双极晶体管(dhbt)的双音互调失真特性。这是通过测量来实现的，并将结果与简单的分析技术进行比较。对中频(50 MHz)和高频(2 GHz)范围进行了表征，并对结果进行了比较。此外，还研究了不同输入偏置水平对非线性的影响。

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Intermodulation distortion characterisation and analysis of the InGaP/GaAs DHBT

The two-tone intermodulation distortion (IMD) characteristic behaviour of microwave InGaP/GaAs double heterojunction bipolar transistors (DHBTs) is studied. This is carried out through measurement, with the results being compared to a simple analytical technique. Both mid frequency (50 MHz) and high frequency (2 GHz) ranges are characterised and the results compared. In addition, the effect of varying input bias levels on the non-linearities has been studied.

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High Frequency Postgraduate Student Colloquium, 2004

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