A Comparative Analysis of Analog Performances of Underlapped Dual Gate AlGaN/GaN Based MOS-HEMT and Schottky-HEMT

This paper presents a comparative and analytical study on the basis of analog performances of an Underlapped Dual Gate (U-DG) AlGaN/GaN MOS-HEMT with gate oxide and an U-DG AlGaN/GaN Schottky-HEMT. The study has been conducted based on the effect on the conduction band energy profile and also on the basic Analog Figure of Merits (FoMs) like Drain current (Id), Transconductance (gm), Output Resistance (ro), Intrinsic Gain (gmro). It has been observed that though Schottky-HEMTs have higher transconductance and faster switching transients, MOS-HEMTs are advantageous over the former as the latter experiences higher drive current capacity, lower threshold voltage, better Ion/Ioff ratio and greater peak intrinsic gain.