S. Blaeser, S. Glass, C. Schulte-Braucks, K. Narimani, N. V. D. Driesch, S. Wirths, A. Tiedemann, S. Trellenkamp, D. Buca, Q. Zhao, S. Mantl
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Novel SiGe/Si line tunneling TFET with high Ion at low Vdd and constant SS
This paper presents a novel SiGe/Si tunneling field-effect transistor (TFET) which exploits line tunneling parallel with the gate electric field. The device makes use of selective and self-adjusted silicidation and a counter doped pocket within the SiGe layer at the source tunnel junction, resulting in a high on-current Ion = 6.7 μA/μm at a supply voltage VDD = -0.5 V and a constant subthreshold swing (SS) of about 80 mV/dec over four orders of magnitude of drain-current Id.
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