{"title":"厚非晶硫化物薄膜中开关和记忆现象的热声学研究","authors":"J. Kotz, M. Shaw","doi":"10.1109/CEIDP.1982.7726531","DOIUrl":null,"url":null,"abstract":"We have employed a thermophonic technique [1] supplemented by numerical analysis in order to study switching and memory effects in the memory-type alloy Ge15 Te18 S2 [2]. The study was initiated because: 1) there was still some doubt as to whether the mechanisms for the initiation of the switching event from a high resistance OFF-state to a low resistance ON-state is predominantly electronic [3-10] or thermal [11-14]; 2) the technique provides a novel way of studying the various phenomena [15] and, for the first time, determining the temperature-time profile during the three phases of the switching cycle.","PeriodicalId":301436,"journal":{"name":"Conference on Electrical Insulation & Dielectric Phenomena - Annual Report 1982","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1982-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A thermophonic investigation of switching and memory phenomena in thick amorphous chalcogenide films\",\"authors\":\"J. Kotz, M. Shaw\",\"doi\":\"10.1109/CEIDP.1982.7726531\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have employed a thermophonic technique [1] supplemented by numerical analysis in order to study switching and memory effects in the memory-type alloy Ge15 Te18 S2 [2]. The study was initiated because: 1) there was still some doubt as to whether the mechanisms for the initiation of the switching event from a high resistance OFF-state to a low resistance ON-state is predominantly electronic [3-10] or thermal [11-14]; 2) the technique provides a novel way of studying the various phenomena [15] and, for the first time, determining the temperature-time profile during the three phases of the switching cycle.\",\"PeriodicalId\":301436,\"journal\":{\"name\":\"Conference on Electrical Insulation & Dielectric Phenomena - Annual Report 1982\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1982-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference on Electrical Insulation & Dielectric Phenomena - Annual Report 1982\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CEIDP.1982.7726531\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference on Electrical Insulation & Dielectric Phenomena - Annual Report 1982","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CEIDP.1982.7726531","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A thermophonic investigation of switching and memory phenomena in thick amorphous chalcogenide films
We have employed a thermophonic technique [1] supplemented by numerical analysis in order to study switching and memory effects in the memory-type alloy Ge15 Te18 S2 [2]. The study was initiated because: 1) there was still some doubt as to whether the mechanisms for the initiation of the switching event from a high resistance OFF-state to a low resistance ON-state is predominantly electronic [3-10] or thermal [11-14]; 2) the technique provides a novel way of studying the various phenomena [15] and, for the first time, determining the temperature-time profile during the three phases of the switching cycle.