基于Smith图的集总晶体管放大器分析设计

H. Elkamchouchi, A. Motawea
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引用次数: 1

摘要

本文提出了一种基于史密斯图方程的解析设计方法,用于任意负载和源阻抗的射频或微波放大器的设计。考虑五种不同的情况,即;(i)最大增益,(ii)输入和输出处的最小噪声系数,(iii)输入处的最小噪声系数和输出处的最大增益,(iv)输入处的最小噪声系数和整个网络的一定增益,(v)宽带输出网络放大器设计。这些设计使用晶体管的散射参数和史密斯图方程,并且仅限于无损l截面。与手工用史密斯图得到的电路参数相比,所得到的电路参数是准确的。此外,宽带设计是精确的,不遵循其他作者使用的试错法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Smith chart based analytical design of lumped transistor amplifiers
The design of a radio-frequency or a microwave amplifier, for any load and source impedance, using an analytical design method based on the Smith chart equations is presented. Five different cases are considered namely; (i) maximum gain, (ii) minimum noise figure at both the input and output, (iii) minimum noise figure at the input and maximum gain at the output, (iv) minimum noise figure at the input and a certain gain for the whole network, and (v) broadband output network amplifier design. These designs use the scattering parameters of the transistor and the Smith chart equations and are limited to lossless L-sections only. It is observed that the obtained circuit parameters are accurate compared to those obtained manually working with a Smith chart. Also the broadband design is exact and do not follow the trial and error method used by other authors.
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