V. Skliarchuk, P. Fochuk, O. Kopach, A. Bolotnikov, R. James
{"title":"用于X和γ辐射探测器的CsPbBr3钙钛矿单晶","authors":"V. Skliarchuk, P. Fochuk, O. Kopach, A. Bolotnikov, R. James","doi":"10.1117/12.2676107","DOIUrl":null,"url":null,"abstract":"Methods were developed for the synthesis and growth of the inorganic perovskite CsPbBr3, which can be used for detection of optical, x-ray, and γ-radiation. The growth of single crystals of these compounds was carried out by the Bridgman method in quartz ampoules using zone-refined starting materials. The electro-physical properties of the lead cesium tribromide CsPbBr3 were studied. Two types of structures with a Cr/CsPbBr3/Ni rectifying barrier and Ni/CsPbBr3/Ni ohmic contacts were created. The resistivity of the semiconductor material (ρ≈7×109 Ohm•cm) and the activation energy of the dark conductivity (▵E≈0.8 eV) were determined. From the measurements of the optical transmission spectra, the energy gap of CsPbBr3 at 300 K was found to be Еg = 2.27 eV. The temperature dependence of the forbidden gap (Eg(T) = 2.4 - 4*10-4 T, eV) was also determined. A significant increase in photosensitivity for the Cr/CsPbBr3/Ni structure was observed at elevated temperatures. The Cr/CsPbBr3/Ni structures were shown to be sensitive to γ radiation. The FWHM of the energy resolution for an 241Am source was measured to be 15.8 keV.","PeriodicalId":434863,"journal":{"name":"Optical Engineering + Applications","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"CsPbBr3 perovskite single crystals for X- and γ-radiation detectors\",\"authors\":\"V. Skliarchuk, P. Fochuk, O. Kopach, A. Bolotnikov, R. James\",\"doi\":\"10.1117/12.2676107\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Methods were developed for the synthesis and growth of the inorganic perovskite CsPbBr3, which can be used for detection of optical, x-ray, and γ-radiation. The growth of single crystals of these compounds was carried out by the Bridgman method in quartz ampoules using zone-refined starting materials. The electro-physical properties of the lead cesium tribromide CsPbBr3 were studied. Two types of structures with a Cr/CsPbBr3/Ni rectifying barrier and Ni/CsPbBr3/Ni ohmic contacts were created. The resistivity of the semiconductor material (ρ≈7×109 Ohm•cm) and the activation energy of the dark conductivity (▵E≈0.8 eV) were determined. From the measurements of the optical transmission spectra, the energy gap of CsPbBr3 at 300 K was found to be Еg = 2.27 eV. The temperature dependence of the forbidden gap (Eg(T) = 2.4 - 4*10-4 T, eV) was also determined. A significant increase in photosensitivity for the Cr/CsPbBr3/Ni structure was observed at elevated temperatures. The Cr/CsPbBr3/Ni structures were shown to be sensitive to γ radiation. The FWHM of the energy resolution for an 241Am source was measured to be 15.8 keV.\",\"PeriodicalId\":434863,\"journal\":{\"name\":\"Optical Engineering + Applications\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-10-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical Engineering + Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2676107\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Engineering + Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2676107","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
CsPbBr3 perovskite single crystals for X- and γ-radiation detectors
Methods were developed for the synthesis and growth of the inorganic perovskite CsPbBr3, which can be used for detection of optical, x-ray, and γ-radiation. The growth of single crystals of these compounds was carried out by the Bridgman method in quartz ampoules using zone-refined starting materials. The electro-physical properties of the lead cesium tribromide CsPbBr3 were studied. Two types of structures with a Cr/CsPbBr3/Ni rectifying barrier and Ni/CsPbBr3/Ni ohmic contacts were created. The resistivity of the semiconductor material (ρ≈7×109 Ohm•cm) and the activation energy of the dark conductivity (▵E≈0.8 eV) were determined. From the measurements of the optical transmission spectra, the energy gap of CsPbBr3 at 300 K was found to be Еg = 2.27 eV. The temperature dependence of the forbidden gap (Eg(T) = 2.4 - 4*10-4 T, eV) was also determined. A significant increase in photosensitivity for the Cr/CsPbBr3/Ni structure was observed at elevated temperatures. The Cr/CsPbBr3/Ni structures were shown to be sensitive to γ radiation. The FWHM of the energy resolution for an 241Am source was measured to be 15.8 keV.