半导体纳米线中的超快载流子动力学

2007 Quantum Electronics and Laser Science Conference Pub Date : 2007-05-06 DOI:10.1117/12.828022

R. Prasankumar, P. Upadhya, Qiming Li, N. Smith, Sukgeun Choi, A. Azad, D. Talbayev, George T. Wang, A. Fischer, J. Hollingsworth, S. Trugman, S. Picraux, A. Taylor

{"title":"半导体纳米线中的超快载流子动力学","authors":"R. Prasankumar, P. Upadhya, Qiming Li, N. Smith, Sukgeun Choi, A. Azad, D. Talbayev, George T. Wang, A. Fischer, J. Hollingsworth, S. Trugman, S. Picraux, A. Taylor","doi":"10.1117/12.828022","DOIUrl":null,"url":null,"abstract":"Time-resolved measurements of carrier dynamics in Ge and GaN nanowires reveal that carrier relaxation in these systems is governed by surface states and defects. This has significant implications for nanowire-based devices in photonics and thermoelectrics.","PeriodicalId":152616,"journal":{"name":"2007 Quantum Electronics and Laser Science Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":"{\"title\":\"Ultrafast carrier dynamics in semiconductor nanowires\",\"authors\":\"R. Prasankumar, P. Upadhya, Qiming Li, N. Smith, Sukgeun Choi, A. Azad, D. Talbayev, George T. Wang, A. Fischer, J. Hollingsworth, S. Trugman, S. Picraux, A. Taylor\",\"doi\":\"10.1117/12.828022\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Time-resolved measurements of carrier dynamics in Ge and GaN nanowires reveal that carrier relaxation in these systems is governed by surface states and defects. This has significant implications for nanowire-based devices in photonics and thermoelectrics.\",\"PeriodicalId\":152616,\"journal\":{\"name\":\"2007 Quantum Electronics and Laser Science Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"24\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Quantum Electronics and Laser Science Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.828022\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Quantum Electronics and Laser Science Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.828022","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 24

摘要

Ge和GaN纳米线中载流子动力学的时间分辨测量表明，这些系统中的载流子弛豫受表面状态和缺陷的控制。这对光子学和热电学中基于纳米线的器件具有重要意义。

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Ultrafast carrier dynamics in semiconductor nanowires

Time-resolved measurements of carrier dynamics in Ge and GaN nanowires reveal that carrier relaxation in these systems is governed by surface states and defects. This has significant implications for nanowire-based devices in photonics and thermoelectrics.

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2007 Quantum Electronics and Laser Science Conference

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