in /sub 0.53/Ga/sub 0.47/As中铑和铱相关深部水平的观察

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328174

B. Srocka, H. Scheffler, D. Bimberg

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引用次数: 0

摘要

本文利用液相外延技术研究了In/sub 0.53/Ga/sub 0.47/As中铑和铱的掺杂，并利用深能级瞬态光谱首次观察到InGaAs中Rh和ir的相关水平。两种掺杂剂都能产生接近中间间隙的水平。现有数据支持这些水平与TM/sup 2+/3+/-单受体转变有关，这些转变是由在阳离子位点上取代合并的TM离子引起的。由层内捕集器浓度确定的分布系数相当小，约为1/ sp1乘以/10/sup -6/。

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Observation of rhodium- and iridium-related deep levels in In/sub 0.53/Ga/sub 0.47/As

We investigated the doping of In/sub 0.53/Ga/sub 0.47/As with rhodium and iridium by Liquid Phase Epitaxy and observed for the first time Rh- and Ir-related levels in InGaAs by means of Deep Level Transient Spectroscopy. Both dopants were found to produce near-midgap levels. The available data support an association of these levels with the TM/sup 2+/3+/-single acceptor transitions caused by substitutionally incorporated TM-ions on cation sites. The distribution coefficients determined from the trap concentrations in the layers are rather small, of the order of 1/spl times/10/sup -6/.<>

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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