压电板Lamb模态和SH模态的机电耦合

E. Adler
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引用次数: 3

摘要

近年来的理论研究和实验表明,在压电材料和压电-非压电复合膜中,数字间换能器(IDTs)可以与板模强烈耦合。已经证明,硅可以支持氧化锌薄膜形成具有大机电耦合因子的薄复合膜,这种技术允许将板模式器件与集成电路集成。本文介绍了典型压电材料中平板模态的速度色散和机电耦合系数的计算方法。给出了不同金属化条件下,在铌酸锂、钽酸锂、石英、氧化铋锗和氧化锌中不同板取向下,广义加劲- lamb、纯加劲- lamb和加劲-剪切(SH)模式下速度和机电耦合因子的频率依赖关系。在窄带带通条件下,铌酸锂机电耦合(AVIV)值高达15%,在宽带低通条件下为5%。对于钽酸锂、氧化铋锗和氧化锌,偶联值分别为0.5%、2%和4%。对于石英,由于其较弱的压电性,耦合更小。详细介绍了耦合因素、波速以及表征各种模式类型的电场和机械场剖面的频率依赖性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electromechanical Coupling to Lamb and SH Modes in Piezoelectric Plates
Recent theoretical studies arid experiments have shown that interdigital transducers (IDTs) can couple strongly to plate modes in piezoelectric materials and in piezoelectric-on-nonpiezoelectic composite membranes. It has been demonstrated that silicon can support zinc oxide films to form thin composite membranes with large electromechanical coupling factors, a technology which allows integration of plate mode devices with ICs. In this paper the calculated velocity dispersion and electromechanical coupling factors for plate modes in representative piezoelectric materials are described. The frequency dependence of velocity and electromechanical coupling factors are given, under different metallization conditions, for: generalized stiffened-Lamb, pure stiffenedLamb, and stiffened- shear (SH) modes, for various plate orientations in lithium niobate, lithium tantalate, quartz, bismuth germanium oxide and zinc oxide. For lithium niobate electromechanical coupling (AVIV) values as high as 15% are found under narrow-band band-pass conditions arid 5% under wide-band low-pass conditions. For lithium tantalate, bismuth germanium oxide, and zinc oxide, coupling values of 0.5%, 2%, and 4% are obtained. For quartz, with its weaker piezoelectricity, the coupling is still smaller. Details of the frequency dependence of coupling factors, wave velocities, and electric and mechanical field profiles which characterize the various mode types are presented.
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