{"title":"深亚微米SOI mosfet中随时间降解规律的测定","authors":"S. Renn, J. Pelloie, F. Balestra","doi":"10.1109/ESSDERC.1997.194524","DOIUrl":null,"url":null,"abstract":"Hot-carrier effects are thoroughly investigated in deep submicron Nand P-channel SOI MOSFET. A saturation phenomenon relative to the initial power time-dependent law can be observed for long stress time. In this paper, various lifetime prediction methods in the saturation regime are proposed and compared. The gate length dependence of the maximal drain biases in order to obtain a 10 years lifetime is also addressed with these various extrapolation techniques.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"On the determination of the time-dependent degradation laws in deep submicron SOI MOSFETs\",\"authors\":\"S. Renn, J. Pelloie, F. Balestra\",\"doi\":\"10.1109/ESSDERC.1997.194524\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hot-carrier effects are thoroughly investigated in deep submicron Nand P-channel SOI MOSFET. A saturation phenomenon relative to the initial power time-dependent law can be observed for long stress time. In this paper, various lifetime prediction methods in the saturation regime are proposed and compared. The gate length dependence of the maximal drain biases in order to obtain a 10 years lifetime is also addressed with these various extrapolation techniques.\",\"PeriodicalId\":424167,\"journal\":{\"name\":\"27th European Solid-State Device Research Conference\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"27th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.1997.194524\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"27th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.1997.194524","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
On the determination of the time-dependent degradation laws in deep submicron SOI MOSFETs
Hot-carrier effects are thoroughly investigated in deep submicron Nand P-channel SOI MOSFET. A saturation phenomenon relative to the initial power time-dependent law can be observed for long stress time. In this paper, various lifetime prediction methods in the saturation regime are proposed and compared. The gate length dependence of the maximal drain biases in order to obtain a 10 years lifetime is also addressed with these various extrapolation techniques.
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