{"title":"基于InP和高温超导体的混合电子学","authors":"R. Singh, M. J. Semnani, J. Cruz, S. Sinha","doi":"10.1109/ICIPRM.1990.203044","DOIUrl":null,"url":null,"abstract":"A hybrid superconductor/InP resonant tunneling transistor (RTT) has been used to design a superfast 8*8-bit digital multiplier/accumulator circuit operating at 77 K with a multiplication time of 152 ps. The transistor structure and performance are described. Preliminary work toward realizing the RTT is reported. In particular, results concerning the deposition of Y-Ba-Cu-O superconducting thin films on Si substrate by rapid-isothermal-processing-assisted metalorganic chemical vapor deposition are presented.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Hybrid electronics based on InP and high temperature superconductors\",\"authors\":\"R. Singh, M. J. Semnani, J. Cruz, S. Sinha\",\"doi\":\"10.1109/ICIPRM.1990.203044\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A hybrid superconductor/InP resonant tunneling transistor (RTT) has been used to design a superfast 8*8-bit digital multiplier/accumulator circuit operating at 77 K with a multiplication time of 152 ps. The transistor structure and performance are described. Preliminary work toward realizing the RTT is reported. In particular, results concerning the deposition of Y-Ba-Cu-O superconducting thin films on Si substrate by rapid-isothermal-processing-assisted metalorganic chemical vapor deposition are presented.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.203044\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203044","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hybrid electronics based on InP and high temperature superconductors
A hybrid superconductor/InP resonant tunneling transistor (RTT) has been used to design a superfast 8*8-bit digital multiplier/accumulator circuit operating at 77 K with a multiplication time of 152 ps. The transistor structure and performance are described. Preliminary work toward realizing the RTT is reported. In particular, results concerning the deposition of Y-Ba-Cu-O superconducting thin films on Si substrate by rapid-isothermal-processing-assisted metalorganic chemical vapor deposition are presented.<>
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