用于SPICE的块体MOSFET单事件瞬态的紧凑建模:在初级电路中的应用

N. Rostand, S. Martinie, J. Lacord, O. Rozeau, O. Billoint, J. Barbe, T. Poiroux, G. Hubert
{"title":"用于SPICE的块体MOSFET单事件瞬态的紧凑建模:在初级电路中的应用","authors":"N. Rostand, S. Martinie, J. Lacord, O. Rozeau, O. Billoint, J. Barbe, T. Poiroux, G. Hubert","doi":"10.1109/SISPAD.2018.8551633","DOIUrl":null,"url":null,"abstract":"Single Event Transients (SET) are important issues concerning reliability of CMOS circuits. They lead to occurrence of soft errors in integrated circuits, such as Single Event Upset (SEU) which consists in unexpected bit state switch in SRAM cells [1], [2]. We can find models which describe SET in literature [1], [5] but they are not compact (i e. physical model implemented in Verilog-A). In previous work [6], we proposed a theoretical SET model but the implementation in Verilog-A was still challenging. Here, we describe the implementation in Verilog-A of this model and use it through standard SPICE simulations to study the effect of SET on SRAM cell and shift register.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Compact Modelling of Single Event Transient in Bulk MOSFET for SPICE: Application to Elementary Circuit\",\"authors\":\"N. Rostand, S. Martinie, J. Lacord, O. Rozeau, O. Billoint, J. Barbe, T. Poiroux, G. Hubert\",\"doi\":\"10.1109/SISPAD.2018.8551633\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Single Event Transients (SET) are important issues concerning reliability of CMOS circuits. They lead to occurrence of soft errors in integrated circuits, such as Single Event Upset (SEU) which consists in unexpected bit state switch in SRAM cells [1], [2]. We can find models which describe SET in literature [1], [5] but they are not compact (i e. physical model implemented in Verilog-A). In previous work [6], we proposed a theoretical SET model but the implementation in Verilog-A was still challenging. Here, we describe the implementation in Verilog-A of this model and use it through standard SPICE simulations to study the effect of SET on SRAM cell and shift register.\",\"PeriodicalId\":170070,\"journal\":{\"name\":\"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2018.8551633\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2018.8551633","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

单事件瞬变(SET)是影响CMOS电路可靠性的重要问题。它们会导致集成电路中出现软错误,例如SRAM单元中意外的位状态切换(Single Event Upset, SEU)[1],[2]。我们可以在文献[1],[5]中找到描述SET的模型,但它们并不紧凑(即在Verilog-A中实现的物理模型)。在之前的工作[6]中,我们提出了一个理论SET模型,但在Verilog-A中实现仍然具有挑战性。在这里,我们描述了该模型在Verilog-A中的实现,并通过标准SPICE模拟来研究SET对SRAM单元和移位寄存器的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Compact Modelling of Single Event Transient in Bulk MOSFET for SPICE: Application to Elementary Circuit
Single Event Transients (SET) are important issues concerning reliability of CMOS circuits. They lead to occurrence of soft errors in integrated circuits, such as Single Event Upset (SEU) which consists in unexpected bit state switch in SRAM cells [1], [2]. We can find models which describe SET in literature [1], [5] but they are not compact (i e. physical model implemented in Verilog-A). In previous work [6], we proposed a theoretical SET model but the implementation in Verilog-A was still challenging. Here, we describe the implementation in Verilog-A of this model and use it through standard SPICE simulations to study the effect of SET on SRAM cell and shift register.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信