一种双极ECL静态RAM，多晶硅二极管负载存储单元采用单聚技术

Proceedings of the 1988 Bipolar Circuits and Technology Meeting, Pub Date : 1988-09-12 DOI:10.1109/BIPOL.1988.51038

B. Hwang, J. Kirchgessner, T. Bushey, S. Foertsch, J. Stipanuk, L. Marshbanks, J. Hernandez, E. Herald

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引用次数: 2

摘要

采用多晶硅二极管负载存储单元实现了1k *1双极发射极耦合逻辑(ECL)静态随机存取存储器(RAM)。使用多晶硅二极管作为存储单元的负载元件是可能的，因为它的I-V特性表现出两个理想因子。在很宽的电池电流范围内，存储电池的保持电压大于240毫伏，其下限在次a范围内。结果表明，对行选择灵敏度的操作非常稳定。从测试电路中获得了1.5 ns的行地址访问时间。

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A bipolar ECL static RAM with polysilicon diode loaded memory cell using single poly technology

A 1 K*1 bipolar emitter coupled logic (ECL) static random access memory (RAM) using a polysilicon diode loaded memory cell is realised in a single poly bipolar process technology. The use of the polysilicon diode as the load element for the memory cell is made possible by the fact that its I-V characteristics exhibit an ideality factor of two. The hold voltage for the memory cell is larger than 240 mV over a wide range of cell currents with the lower bound residing in the sub- mu A range. Results show extremely stable operation against row select sensitivity. A 1.5-ns row address access time has been obtained from the test circuit.<>

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Proceedings of the 1988 Bipolar Circuits and Technology Meeting,

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