一种用于CNFET技术中图像处理运动和边缘检测系统的新型高效非精确全加法器单元

Y. S. Mehrabani, Samaneh Goldani Gigasari, Mohammad Mirzaei, Hamidreza Uoosefian
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引用次数: 3

摘要

本文利用传统CMOS (C-COMS)和通管逻辑(PTL)两种逻辑方式,提出了一种新型、高效的非精确全加法器单元。所谓的碳纳米管场效应晶体管(CNFET)技术被用来实现晶体管级的电路。为了证明我们设计的效率,在晶体管级和应用级进行了广泛的模拟。利用HSPICE 2008工具进行的晶体管级模拟表明,与最新设计相比,所提出电路的功率延迟面积积(PDAP)的性能至少提高了12%。在应用层面,通过使用MATLAB工具,在运动和边缘检测算法中应用的纹波进位加法器(RCA)的结构中采用了不精确的全加法器。计算机仿真结果证实了输出图像在峰值信噪比(PSNR)和结构相似性(SSIM)标准方面的适当质量。最后,为了在硬件和应用层参数之间做出妥协,将功率延迟面积-1/PSNR产品(PDAPP)和功率延迟面积-1/SSIM产品(PDASP)作为优劣指标。从PDAPP和PDASP的角度来看,所提出的电路与同类电路相比有显著的改进。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Novel Highly-Efficient Inexact Full Adder Cell for Motion and Edge Detection Systems of Image Processing in CNFET Technology
In this paper, a novel and highly efficient inexact Full Adder cell by exploiting two logic styles including conventional CMOS (C-COMS) and pass transistor logic (PTL) are presented. The so-called carbon nanotube field-effect transistor (CNFET) technology is used to implement circuits at the transistor level. To justify the efficiency of our design, extensive simulations are performed at the transistor level as well as application level. Transistor-level simulations which are carried out by the HSPICE 2008 tool, demonstrate at least 12% higher performance in terms of power-delay-area product (PDAP) of the proposed circuit compared to the latest designs. At the application level, by using the MATLAB tool, inexact Full Adders are employed in the structure of the ripple carry adder (RCA) that is applied in motion and edge detection algorithms. Computer simulation results confirm the appropriate quality of the output images in terms of the peak signal-to-noise ratio (PSNR) and structural similarity (SSIM) criteria. At last, to make a compromise between hardware and application level parameters, the power-delay-area-1/PSNR product (PDAPP) and power-delay-area-1/SSIM product (PDASP) are considered as figures of merit. The proposed circuit shows remarkable improvement from the PDAPP and PDASP points of view compared to its counterparts.
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