混合测试夹具中FET器件的四端口去嵌入技术

M. Medina, D. Schreurs, B. Nauwelaers
{"title":"混合测试夹具中FET器件的四端口去嵌入技术","authors":"M. Medina, D. Schreurs, B. Nauwelaers","doi":"10.1109/EMICC.2006.282683","DOIUrl":null,"url":null,"abstract":"High frequency devices aimed for power applications cannot be characterized by on-wafer measurements due to power dissipation constraints. Therefore characterization using test fixture is necessary. Latest techniques applied to on-wafer devices use a four-port characterization of the extrinsic network surrounding the device. Nevertheless, this cannot be applied straightforwardly to the test fixture case due to the fact that the ground reference of the device is not the same as the measurement, and this effect increases with frequency. A five-port definition would lead to an accurate characterization, but with the increase of the complexity of the problem. This paper presents an alternative technique based on four-port de-embedding technique with a correction of the local ground effect by using two cold-FET measurements and a simplification of the four-port matrix model","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Four-port Deembedding Technique for FET Devices Mounted in Hybrid Test Fixture\",\"authors\":\"M. Medina, D. Schreurs, B. Nauwelaers\",\"doi\":\"10.1109/EMICC.2006.282683\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High frequency devices aimed for power applications cannot be characterized by on-wafer measurements due to power dissipation constraints. Therefore characterization using test fixture is necessary. Latest techniques applied to on-wafer devices use a four-port characterization of the extrinsic network surrounding the device. Nevertheless, this cannot be applied straightforwardly to the test fixture case due to the fact that the ground reference of the device is not the same as the measurement, and this effect increases with frequency. A five-port definition would lead to an accurate characterization, but with the increase of the complexity of the problem. This paper presents an alternative technique based on four-port de-embedding technique with a correction of the local ground effect by using two cold-FET measurements and a simplification of the four-port matrix model\",\"PeriodicalId\":269652,\"journal\":{\"name\":\"2006 European Microwave Integrated Circuits Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 European Microwave Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2006.282683\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 European Microwave Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2006.282683","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

由于功耗限制,用于功率应用的高频器件不能通过晶圆上测量来表征。因此,使用测试夹具进行表征是必要的。应用于晶圆器件的最新技术使用围绕器件的外部网络的四端口表征。然而,这不能直接应用到测试夹具的情况下,由于设备的接地参考是不一样的测量,这种影响随着频率增加。五个端口的定义将导致准确的特征,但随着问题复杂性的增加。本文提出了一种基于四端口去嵌入技术的替代技术,该技术通过使用两次冷场效应管测量和简化四端口矩阵模型来校正局部地效应
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Four-port Deembedding Technique for FET Devices Mounted in Hybrid Test Fixture
High frequency devices aimed for power applications cannot be characterized by on-wafer measurements due to power dissipation constraints. Therefore characterization using test fixture is necessary. Latest techniques applied to on-wafer devices use a four-port characterization of the extrinsic network surrounding the device. Nevertheless, this cannot be applied straightforwardly to the test fixture case due to the fact that the ground reference of the device is not the same as the measurement, and this effect increases with frequency. A five-port definition would lead to an accurate characterization, but with the increase of the complexity of the problem. This paper presents an alternative technique based on four-port de-embedding technique with a correction of the local ground effect by using two cold-FET measurements and a simplification of the four-port matrix model
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信