Characterization and Modeling of Advanced Placement Algorithms for NAND Flash Arrays

This work aims at providing an accurate and flexible tool to simulate the most advanced placement algorithms for state-of-the-art NAND Flash devices. A model for incremental step pulse programming is discussed and experimentally validated, showing its capability to describe the dependence on the program pulse duration/amplitude and to correctly reproduce the proximity effect and the selective slow program convergence behavior, when a bit line/channel bias is applied. Finally, when the entire memory array is simulated in a Monte Carlo fashion, the placement of our decananometer 3bit/cell device can be accurately reproduced, including the behavior of the advanced programming features.