砷化镓上沉积p型金属触点的蚀刻

Proceedings of 2001 3rd International Conference on Transparent Optical Networks (IEEE Cat. No.01EX488) Pub Date : 2001-06-18 DOI:10.1109/ICTON.2001.934779

Z. Mahmood, S. Bashar

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引用次数: 2

摘要

本文介绍了在砷化镓晶圆上沉积金属触点的湿法蚀刻和干法蚀刻。采用Au-Zn-Au层在GaAs体晶片上形成了A /spl sim/240 nm的p型薄层。采用ki - 1 /sub - 2/和HNO/sub - 3/-HCl蚀刻液对金属触点进行湿法蚀刻，在氩等离子体反应离子蚀刻室中进行干法蚀刻。讨论了两种蚀刻工艺的结果。

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Etching of p-type metal contact deposited on GaAs

In this paper, both wet etching and dry etching of metal contacts deposited on GaAs wafer have been described. A /spl sim/240 nm thin layer of p-type contact was formed on GaAs bulk wafer using Au-Zn-Au layer. Wet etching of the metal contact was done using KI-I/sub 2/ and HNO/sub 3/-HCl etch solutions and the dry etching was performed in an argon plasma reactive ion etcher chamber. Results are discussed for both the etching processes.

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Proceedings of 2001 3rd International Conference on Transparent Optical Networks (IEEE Cat. No.01EX488)

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