A. Heinrich, A. Burkov, C. Gladun, G. Behr, K. Herz, J. Schumann, H. Powalla
{"title":"未掺杂和共掺杂/spl β /-FeSi2单晶和/spl β /-FeSi2+x薄膜的热功率和电阻率","authors":"A. Heinrich, A. Burkov, C. Gladun, G. Behr, K. Herz, J. Schumann, H. Powalla","doi":"10.1109/ICT.1996.553256","DOIUrl":null,"url":null,"abstract":"Thermopower and electrical resistivity have been investigated of /spl beta/-FeSi/sub 2/ single crystals and /spl beta/-FeSi/sub 2+x/ thin films in the temperature range from 40 K to 1200 K. The single crystals were grown by chemical transport reaction with source material of different purity and with a Si/Fe ratio between 1.5 and 2.5 to obtain crystals from the Fe-rich and Si-rich boundaries of the homogeneity range, respectively. The undoped and co-doped thin films have been prepared in the range -0.06<x<0.25 by coevaporation. It is shown that the conductivity type of the single crystals changes from p-type to n-type with increasing purity of the starting material. Both thermopower and resistivity depend on the deviation from strict stoichiometry. The low temperature thermopower is mainly determined by phonon drag effect. The undoped films are of p-type. It is shown that the films are especially sensitive to doping at x/spl ap/0.13.","PeriodicalId":447328,"journal":{"name":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Thermopower and electrical resistivity of undoped and co-doped /spl beta/-FeSi2 single crystals and /spl beta/-FeSi2+x thin films\",\"authors\":\"A. Heinrich, A. Burkov, C. Gladun, G. Behr, K. Herz, J. Schumann, H. Powalla\",\"doi\":\"10.1109/ICT.1996.553256\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thermopower and electrical resistivity have been investigated of /spl beta/-FeSi/sub 2/ single crystals and /spl beta/-FeSi/sub 2+x/ thin films in the temperature range from 40 K to 1200 K. The single crystals were grown by chemical transport reaction with source material of different purity and with a Si/Fe ratio between 1.5 and 2.5 to obtain crystals from the Fe-rich and Si-rich boundaries of the homogeneity range, respectively. The undoped and co-doped thin films have been prepared in the range -0.06<x<0.25 by coevaporation. It is shown that the conductivity type of the single crystals changes from p-type to n-type with increasing purity of the starting material. Both thermopower and resistivity depend on the deviation from strict stoichiometry. The low temperature thermopower is mainly determined by phonon drag effect. The undoped films are of p-type. It is shown that the films are especially sensitive to doping at x/spl ap/0.13.\",\"PeriodicalId\":447328,\"journal\":{\"name\":\"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-03-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICT.1996.553256\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICT.1996.553256","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermopower and electrical resistivity of undoped and co-doped /spl beta/-FeSi2 single crystals and /spl beta/-FeSi2+x thin films
Thermopower and electrical resistivity have been investigated of /spl beta/-FeSi/sub 2/ single crystals and /spl beta/-FeSi/sub 2+x/ thin films in the temperature range from 40 K to 1200 K. The single crystals were grown by chemical transport reaction with source material of different purity and with a Si/Fe ratio between 1.5 and 2.5 to obtain crystals from the Fe-rich and Si-rich boundaries of the homogeneity range, respectively. The undoped and co-doped thin films have been prepared in the range -0.06
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
