一个108Gb/s 4:1多路复用器，采用0.13/spl mu/m sige双极技术

2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519) Pub Date : 2004-09-13 DOI:10.1109/ISSCC.2004.1332681

M. Meghelli

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引用次数: 42

摘要

报道了一种采用210GHz f/sub /， 0.13/spl mu/m sige双极技术实现的4:1多路复用器，其工作速度超过100Gb/s。片上时钟分布的控制是实现这种数据速率的关键。该芯片从-3.3V电源消耗1.45W，输出数据显示小于340fs rms的抖动。

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A 108Gb/s 4:1 multiplexer in 0.13/spl mu/m SiGe-bipolar technology

A 4:1 multiplexer implemented in a 210GHz f/sub t/, 0.13/spl mu/m SiGe-bipolar technology and operating beyond 100Gb/s is reported. Control of on-chip clock distribution is critical to achieve such data rate. The chip consumes 1.45W from a -3.3V supply and exhibits less than 340fs rms jitter on the output data.

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2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)

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