纳米介入晶体平面。3裂解GaSe(001)表面的晶体生长和微观形貌

International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices Pub Date : 2012-07-02 DOI:10.1109/EDM.2012.6310248

A. Kozhukhov, T. Gavrilova, K. Kokh, V. Atuchin

{"title":"纳米介入晶体平面。3裂解GaSe(001)表面的晶体生长和微观形貌","authors":"A. Kozhukhov, T. Gavrilova, K. Kokh, V. Atuchin","doi":"10.1109/EDM.2012.6310248","DOIUrl":null,"url":null,"abstract":"Optical quality GaSe crystals with diameter of 10 mm have been grown by modified Bridgman method using unusual oscillating temperature regime in the middle zone at the level of crystallization front. Cleaved surface (001) has been evaluated by SEM and AFM. Basic cleaved surface with area up to ~200 mm2 is flat with as low rms parameter as 0,3 nm. Such local defects as hillocks up to 35 nm and mesostructure are observed by SEM and AFM.","PeriodicalId":347076,"journal":{"name":"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Nanointervention into crystal flatland. III. Crystal growth and micromorphology of cleaved GaSe(001) surface\",\"authors\":\"A. Kozhukhov, T. Gavrilova, K. Kokh, V. Atuchin\",\"doi\":\"10.1109/EDM.2012.6310248\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Optical quality GaSe crystals with diameter of 10 mm have been grown by modified Bridgman method using unusual oscillating temperature regime in the middle zone at the level of crystallization front. Cleaved surface (001) has been evaluated by SEM and AFM. Basic cleaved surface with area up to ~200 mm2 is flat with as low rms parameter as 0,3 nm. Such local defects as hillocks up to 35 nm and mesostructure are observed by SEM and AFM.\",\"PeriodicalId\":347076,\"journal\":{\"name\":\"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-07-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDM.2012.6310248\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2012.6310248","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用改进的Bridgman方法，在结晶前沿水平的中间区域采用异常的振荡温度，生长出了直径为10 mm的光学质量的GaSe晶体。通过SEM和AFM对切割表面(001)进行了评价。面积可达~ 200mm2的基本切割面是平坦的，rms参数低至0.3 nm。通过扫描电镜和原子力显微镜观察到35 nm以下的局部缺陷和细观结构。

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Nanointervention into crystal flatland. III. Crystal growth and micromorphology of cleaved GaSe(001) surface

Optical quality GaSe crystals with diameter of 10 mm have been grown by modified Bridgman method using unusual oscillating temperature regime in the middle zone at the level of crystallization front. Cleaved surface (001) has been evaluated by SEM and AFM. Basic cleaved surface with area up to ~200 mm2 is flat with as low rms parameter as 0,3 nm. Such local defects as hillocks up to 35 nm and mesostructure are observed by SEM and AFM.

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International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices

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