应变锗微桥向直接带隙过渡时的光谱学

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI:10.1109/GROUP4.2015.7305917

R. Geiger, T. Zabel, V. Reboud, J. Hartmann, J. Widiez, V. Calvo, N. Pauc, A. Gassenq, K. Guiloy, A. Chelnokov, J. Faist, H. Sigg

{"title":"应变锗微桥向直接带隙过渡时的光谱学","authors":"R. Geiger, T. Zabel, V. Reboud, J. Hartmann, J. Widiez, V. Calvo, N. Pauc, A. Gassenq, K. Guiloy, A. Chelnokov, J. Faist, H. Sigg","doi":"10.1109/GROUP4.2015.7305917","DOIUrl":null,"url":null,"abstract":"We present photoluminescence spectroscopy and failure statistics of Ge suspended bridges fabricated from 200 mm wafers of photonic-grade Germanium-On-Insulator with uniaxial tensile strain up to 4.6% at the crossover to a fundamental direct band gap.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Optical spectroscopy on strained Ge microbridges at the transition to a direct band gap\",\"authors\":\"R. Geiger, T. Zabel, V. Reboud, J. Hartmann, J. Widiez, V. Calvo, N. Pauc, A. Gassenq, K. Guiloy, A. Chelnokov, J. Faist, H. Sigg\",\"doi\":\"10.1109/GROUP4.2015.7305917\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present photoluminescence spectroscopy and failure statistics of Ge suspended bridges fabricated from 200 mm wafers of photonic-grade Germanium-On-Insulator with uniaxial tensile strain up to 4.6% at the crossover to a fundamental direct band gap.\",\"PeriodicalId\":244331,\"journal\":{\"name\":\"2015 IEEE 12th International Conference on Group IV Photonics (GFP)\",\"volume\":\"120 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 12th International Conference on Group IV Photonics (GFP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2015.7305917\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2015.7305917","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

我们介绍了由200毫米光子级绝缘子上锗晶圆制成的锗悬索桥的光致发光光谱和失效统计数据，在基本直接带隙的交叉处，单轴拉伸应变高达4.6%。

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Optical spectroscopy on strained Ge microbridges at the transition to a direct band gap

We present photoluminescence spectroscopy and failure statistics of Ge suspended bridges fabricated from 200 mm wafers of photonic-grade Germanium-On-Insulator with uniaxial tensile strain up to 4.6% at the crossover to a fundamental direct band gap.

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2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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